The MSc Microelectronics is a highly
specialized programme offered on a full-time basis for training engineers to
work in silicon wafer fabrication industries, engage with the related
research institutions and pursue further studies.
Students are required to take 12 modules in microelectronics topics,
including 6 core modules, 4 elective modules, and 2 laboratory modules, and
to complete a one-semester project. Each technical module has 45 contact
hours. The project should be on a topic related to microelectronics, may be
undertaken either at NTU or at TUM or in the industry. In addition, students
will take an English module of 80 hours and 5 other non-technical short
modules of 10 hours each. The technical modules are as follows:
Core Modules
Advanced Wafer Processing
Quality and Reliability Engineering
Advanced Topics in Semiconductor Devices
Nanoelectronics
Advanced MOSEFTs & Novel Devices
Laboratory 1: Sub-micron Semiconductor Process and Device Simulation
Laboratory 2: Integrated Circuits: Process, Device & Circuit Design
Elective Modules (Select 4)
Integrated Circuit Packaging
Failure Mechanisms in Semiconductor Devices
Silicon photonics
VLSI and ULSI Technologies
*Subject to addition/modification
Cross Discipline Modules
Business and Technical English
International Patent Law
Selected topics in Business and Administration
Selected topics in Management methods
Cultural, social and economical aspects of globalization
Aspects of European and Asian Culture and History
Modules Description
SUBJECT CONTENTS
Advanced Wafer Processing
Thin film deposition. Chemical and
mechanical polishing. Lithography and resist technology. Etching process and
technology. Cleaning technology. Process integration. Metrology and
analytical techniques
Quality and Reliability Engineering
Quality management and planning.
Statistical process control. Design of experiments. Reliability planning &
statistical framework. Burn-in, FMEA and accelerated testing.
Advanced Topics in Semiconductor Devices
Bipolar transistor operating
principles. Bipolar device modeling. State-of-the-art bipolar structures.
MOS device operation. MOSFET modeling. MOS device scaling effects.
Semiconductor memories. Semiconductor heterojunctions. Future trends and
challenges.
Sub-micron Semiconductor Process and Device Simulation
The subject will cover the design
and simulation for sub-micron integrated circuits and their fabrication.
There will be virtual wafer fabrication, virtual device characterization and
virtual process integration modules. The students will be required to carry
out the design with hands-on project exercises through the use of simulation
software packages.
Integrated Circuits: Process, Device & Circuit Design
Key design concepts pertaining to
the fabrication and instrumentation of integrated silicon electronic
circuits.
Failure Mechanisms in Semiconductor Devices
Introduction to Failure
Mechanisms. Bulk failure mechanism of semiconductor devices. Dielectric
failure mechanisms of semiconductor devices. Metallization failure
mechanisms of semiconductor devices. Interface failure mechanisms of
semiconductor devices. Reliability testing.
Integrated Circuit Packaging
Plastic packaging materials.
Manufacturing processes for plastic encapsulated microelectronics.
State-of-the-art packaging techniques. Failure mechanisms, sites and modes.
Qualification process and accelerated testing. Effects of packaging on the
electrical performance. Future trends and challenges.
Silicon Photonics
Silicon nanocrystal, silicon on
insulator, light emitting diodes using silicon nanocrystal technology,
lasers and modulators using silicon on insulator technology. Integrated
Optoelectronics Circuits.
VLSI and ULSI Technologies
MOSFET and NMOS process
technology. CMOS process technology. Bipolar process technology. MOSscaling
rules and small geometry effects. CMOS isolation and latchup. MOS memory
fabrication technology. Advanced VLSI and ULSI fabrication technologies.
Admission requirements
Good bachelor’s degree in
electrical/electronic engineering or equivalent degree in other relevant
disciplines as the Board of Graduate Studies may approve.
Preferably for those who have at
least 6 months of relevant working experience.
Tuition fees
The tuition fee per semester for
the ME (M.Sc.) programme is SGD 10,000
This fee is including:
·matriculation fees at relevant universities, teaching and examination fees
·lab materials and expenses
·expenses for intercultural program, including tickets for events and
industry excursions
·all fees for scripts, excluding text books
·usage of all university facilities at TUM and NUS / NTU or relevant
universities like library fees
·all administration fees
·fees for computer and internet access
·excursion and off-campus expenses for mandatory events
Fees charged do not depend on
nationality. Our institute acts according to its non-discrimination policy.
Tuition fees are subject to change by action of the supervising boards.
Goods & Services Tax in Singapore (GST) is chargeable on the total tuition
fee. It is waived only for international students sponsored by foreign
companies.
The total tuition fee is payable to the German Institute of Science and
Technology (GIST) in three equal instalment payments. The payment schedule
is as follows:
1st payment is due in July upon confirmation or admission to the programme
2nd payment is due in January
3rd payment is due at the end of June
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